Title :
Self-heating effect in SOI MOSFETs
Author :
Zimin, Sun ; Litian, Liu ; Zhijian, Li
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
Self-heating effect in SOI MOSFETs affects the carrier mobility, SOI MOSFETs threshold voltage and the band gap of silicon in channel. The mechanism of heat generation and heat dissipation in SOI MOSFETs is analyzed in this paper on the basis of which a simple self-heating effect model is established. The model introduces only one factor related with self-heating effect whose value can be easily determined according to the device structure parameters. The model is also verified experimentally
Keywords :
MOSFET; carrier mobility; energy gap; semiconductor device models; silicon-on-insulator; SOI MOSFET; band gap; carrier mobility; heat dissipation; heat generation; self-heating effect model; threshold voltage; Aluminum; Equations; Heating; MOSFET circuits; Photonic band gap; Power dissipation; Silicon; Temperature; Thermal conductivity; Thermal factors;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785951
