A numerical analysis for heterojunction phototransistor

Author

Chengzhou, Ji ; Huailin, Liao ; Guohui, Li

Author_Institution

Inst. of Low Energy Nucl. Phys., Beijing Normal Univ., China

fYear

1998

fDate

1998

Firstpage

618

Lastpage

621

Abstract

A punch-through type AlGaAs-GaAs heterojunction phototransistor with a guarding modulation electrode is analyzed by a numerical procedure. The augmented drift-diffusion model is regarded as a suitable model to describe the device, and the coupled equations are solved by the successive line overrelaxation method. The distribution of carriers and electric potential, transportation of non-equilibrium carriers and frequency characteristics are computed systematically. Preliminary results are presented and discussed briefly

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; numerical analysis; phototransistors; semiconductor device models; AlGaAs-GaAs; AlGaAs-GaAs phototransistor; augmented drift-diffusion model; carrier distribution; coupled equations; electric potential; frequency characteristics; guarding modulation electrode; heterojunction phototransistor; nonequilibrium carriers; numerical analysis; punch-through type; successive line overrelaxation method; Distributed computing; Electric potential; Electrodes; Equations; Gallium arsenide; Heterojunctions; Numerical analysis; Phototransistors; Road transportation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785965

Filename

785965