Title :
No-alloy ohmic contact to heavily carbon-doped GaAs
Author :
Lian Peng ; Lv Hui ; Yin Yao ; Chen changhua ; Xu Zuntu ; Zhang Hongqin ; Liu Dejun ; Ma Xiaoyu ; Chen Lianghui ; Shen Guangdi
Author_Institution :
Dept. of Electron. Eng., Beijing Polytech. Univ., China
Abstract :
The doping behavior of carbon doped GaAs materials grown by low pressure MOVPE has been studied. Heavily carbon-doped GaAs layers with hole concentration in the range of 1.5×1019 cm-3 to 1.9×1020 cm-3 were obtained. Two different metallization schemes, Ti/Au and Au/Zn/Au, were deposited onto these heavily carbon-doped GaAs layers respectively. The contact resistance before and after alloying was measured using the transmission line method. The relation between hole concentration in GaAs layers and ohmic contact resistance has been obtained. The influence of the alloy process on contact resistance has also been studied. A specific contact resistivity lower than 10-6Ω·cm has been achieved in GaAs/TiAu no-alloying structures
Keywords :
III-V semiconductors; carbon; contact resistance; gallium arsenide; heavily doped semiconductors; hole density; ohmic contacts; semiconductor device metallisation; semiconductor epitaxial layers; semiconductor-metal boundaries; Au-Zn-Au-GaAs:C; Ti-Au-GaAs:C; contact resistance; heavily C-doped GaAs; hole concentration; low pressure MOVPE; no-alloy contact; ohmic contact; specific contact resistivity; transmission line method; Contact resistance; Doping; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gold; Metallization; Ohmic contacts; Organic materials; Zinc;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785982
