Title :
Material and device issues of GaN-based HEMTs
Author :
Kordos, P. ; Alam, A. ; Betko, J. ; Chow, P.P. ; Heuken, M. ; Javorka, P. ; Kocan, M. ; Marso, M. ; Morvic, M. ; Van Hove, J.M.
Author_Institution :
Julich Res. Centre, Inst. of Thin Film & Ion Technol., Germany
Abstract :
Material structure and device processing issues related to the performance of high-frequency and high-power AlGaN-GaN HEMTs are discussed. Results on selected issues like transport properties of highly resistive buffer layers, persistent photoconductivity in 2DEG structures, preparation and properties of ohmic and Schottky-barrier contacts and HEMT devices, as well as analysis of deep traps in HEMTs are addressed in this paper in detail
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; gallium compounds; microwave field effect transistors; ohmic contacts; photoconductivity; power HEMT; two-dimensional electron gas; wide band gap semiconductors; 2DEG structures; AlGaN-GaN; AlGaN/GaN HEMTs; GaN-based HEMTs; Schottky-barrier contacts; deep traps; device processing; high-frequency HEMTs; high-power HEMTs; highly resistive buffer layers; material structure; ohmic contacts; persistent photoconductivity; transport properties; Aluminum gallium nitride; Buffer layers; Conductivity; Gallium nitride; HEMTs; Hall effect; MOCVD; MODFETs; Photoconducting materials; Temperature;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on
Conference_Location :
Glasgow
Print_ISBN :
0-7803-6550-X
DOI :
10.1109/EDMO.2000.919030
