DocumentCode :
3066191
Title :
Geometry dependence of low-temperature grown GaAs photoconductive switches for terahertz detector
Author :
Mizui, Kenta ; Tomita, N. ; Kawayama, Iwao ; Murakami, H. ; Tonouchi, Masayoshi
Author_Institution :
Inst. of Laser Eng., Osaka Univ., Suita, Japan
fYear :
2013
fDate :
June 30 2013-July 4 2013
Firstpage :
1
Lastpage :
2
Abstract :
We investigated the geometry dependence of photo-conductive dipole antennas fabricated on the same low-temperature-grown GaAs substrate to clarify the effect of the antenna width and the excitation laser power.
Keywords :
III-V semiconductors; dipole antennas; gallium arsenide; laser beam effects; microwave photonics; optical fabrication; photoconducting switches; terahertz wave detectors; GaAs; excitation laser power; geometry dependence; low-temperature grown photoconductive switches; low-temperature-grown GaAs substrate; photoconductive dipole antenna width; terahertz detector; Detectors; Dipole antennas; Laser beams; Laser excitation; Power lasers; Principal component analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
Type :
conf
DOI :
10.1109/CLEOPR.2013.6600529
Filename :
6600529
Link To Document :
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