Title :
A trap generation statistical model in closed-form for intrinsic breakdown of ultra-thin oxides
Author :
Huang, Huan-Tsung ; Chen, Ming-Jer ; Chen, Jyh-Huei ; Su, Chi-Wen ; Hou, Chin-Shan ; Liang, Mong-Song
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A trap generation statistical model with the trap radius r and the trap filling fraction p both as parameters has been formulated in closed-form for intrinsic breakdown of ultra-thin oxides. Reproduction of experimental QBD distributions for different oxide thicknesses and areas has been achieved through the model. The extracted values of r and p are quite comparable with the literature ones. The model itself has successfully predicted the ultimate thickness limit for breakdown. Also presented is the Emission Spectroscopy (EMMI) of breakdown sites as well as Atomic Force Microscope (AFM) images of silicon and oxide surfaces, to validate the assumptions used in model
Keywords :
CMOS integrated circuits; MOSFET; Monte Carlo methods; Poisson distribution; Weibull distribution; electric breakdown; electron traps; interface states; oxidation; semiconductor device breakdown; semiconductor process modelling; semiconductor-insulator boundaries; 0.25 mum; AFM images; CMOS process; Monte Carlo simulation; Si-SiO2; Weibull scale; breakdown sites; charge-to-breakdown distribution; closed-form formulation; electron trap generation; emission spectroscopy; intrinsic breakdown; nMOSFET; oxide thickness; trap filling fraction; trap generation statistical model; trap radius; ultimate thickness limit; ultra-thin oxides; Atomic force microscopy; Electric breakdown; Electron traps; Filling; Predictive models; Research and development; Semiconductor device manufacture; Silicon; Spectroscopy; Statistics;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1999. International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-5620-9
DOI :
10.1109/VTSA.1999.786002
