Title :
High quality ultra-thin (2.4 nm) oxide prepared by clustered vertical furnace with in-situ HF-vapor pre-gate oxide cleaning
Author :
Chao, T.S. ; Chen, J.L. ; Lai, C.S. ; Lin, H.C. ; Huang, T.Y.
Author_Institution :
Nat. Nano Device Lab., Hsinchu, Taiwan
Abstract :
In this paper, we grow and characterize in detail native-oxide-free ultra-thin gate oxide (Tox=2.4 nm) by an advance clustered vertical furnace with in-situ HF-vapor stripping of the native oxide. Excellent results are demonstrated. Gate oxide integrity is significantly improved in terms of leakage, time-to-breakdown, breakdown field, interface-state-density, stress-induced leakage current, Id, and Gm. In-situ HF-vapor cleaning by a clustered vertical furnace therefore appears to be very promising to grow high-quality native-oxide-free gate oxide for future deep-submicron device application
Keywords :
MOS capacitors; MOSFET; charge injection; dielectric thin films; electric breakdown; interface states; leakage currents; oxidation; secondary ion mass spectra; semiconductor device reliability; surface cleaning; 2.4 nm; 800 C; HF; HF-vapor stripping; MOS capacitors; MOSFETs; SIMS analysis; Si; Si-SiO2; breakdown field; charge injection; clustered vertical furnace; deep-submicron device application; gate oxide integrity; gate oxide reliability; in-situ HF-vapor pre-gate oxide cleaning; interface-state-density; leakage; native oxide removal; oxidation temperature; stress-induced leakage current; time-to-breakdown; ultra-thin oxide preparation; Chaos; Cleaning; Electric breakdown; Furnaces; High K dielectric materials; High-K gate dielectrics; Leakage current; MOS capacitors; Oxidation; Tunneling;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1999. International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-5620-9
DOI :
10.1109/VTSA.1999.786003
