RF CMOS technology

Author

Iwai, Hiroslu

Author_Institution

Frontier Collaborative Res. Center, Tokyo Inst. of Technol., Yokohama, Japan

fYear

2004

fDate

24-27 Aug. 2004

Firstpage

296

Lastpage

298

Abstract

RF CMOS characteristics have been traditionally regarded as poorer than those of Si-bipolar and compound devices. However, recent aggressive downsizing of CMOS devices has improved their RF characteristics significantly and some of them have already exceeded some Si-bipolar and GaAs transistors. In the near future, RF front-end and base band chips could merge into one chip. In this paper, the current status and future prospects of advanced RF CMOS technology are described, especially with comparison to SiGe BiCMOS RF technologies.

Keywords

CMOS integrated circuits; radiofrequency integrated circuits; CMOS device downsizing; RF CMOS technology; base band chips; front-end chips; Analog circuits; BiCMOS integrated circuits; CMOS digital integrated circuits; CMOS logic circuits; CMOS technology; Gallium arsenide; Germanium silicon alloys; Integrated circuit technology; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Science Conference, 2004. Proceedings. 2004 Asia-Pacific

Print_ISBN

0-7803-8404-0

Type

conf

DOI

10.1109/APRASC.2004.1422464

Filename

1422464

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3066487