D-Band Heterodyne Integrated Imager in a 65-nm CMOS Technology

Author

Daekeun Yoon ; Namhyung Kim ; Kiryong Song ; Jungsoo Kim ; Seung Jae Oh ; Jae-Sung Rieh

Author_Institution

Sch. of Electr. Eng., Korea Univ., Seoul, South Korea

Volume

25

Issue

3

fYear

2015

fDate

Mar-15

Firstpage

196

Lastpage

198

Abstract

A D-band heterodyne integrated imager, consisting of a mixer, an oscillator, an IF amplifier, and an IF detector, has been developed in a 65-nm CMOS technology. A measured responsivity of 720 kV/W and noise equivalent power (NEP) of 0.9 pW/Hz^1/2 were obtained at 125 GHz. A total dc power of 74 mW was dissipated. The chip size is 1200×800 μm² including contact pads and an input balun. A D-band image was acquired with the imager serving as a detector. A significant resolution enhancement was demonstrated with a near-field imaging achieved by a metal plate with a pinhole in the imaging setup.

Keywords

CMOS image sensors; image resolution; intermediate-frequency amplifiers; microwave oscillators; mixers (circuits); CMOS technology; D-band heterodyne integrated imager; IF amplifier; IF detector; contact pads; frequency 125 GHz; input balun; metal plate; mixer; near-field imaging; noise equivalent power; oscillator; power 74 mW; resolution enhancement; size 1200 mum; size 65 nm; size 800 mum; CMOS integrated circuits; Detectors; Image resolution; Imaging; Mixers; Noise; Oscillators; CMOS; CMOS integrated circuit; imaging; receivers;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2015.2390496

Filename

7017460