Title :
Improved method for lateral profiling of interface traps and oxide charge in MOSFET devices
Author :
Melik-Martirosian, Ashot ; Ma, T.P.
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Abstract :
An improved oxide-charge and interface-trap lateral profiling charge pumping technique is proposed. Erase-induced oxide charge and interface traps are investigated in Flash EPROM devices. It is shown that the improved technique allows the extraction of profiles in cases where the previous method does not yield satisfactory results
Keywords :
MOSFET; doping profiles; flash memories; hot carriers; interface states; semiconductor device measurement; semiconductor device reliability; MOS device reliability; MOSFET devices; doping profile; erase-induced oxide charge; flash EPROM devices; hot carrier effects; interface traps; lateral profiling; lateral profiling charge pumping technique; oxide charge; Charge measurement; Charge pumps; Current measurement; Electron traps; Hot carriers; MOSFET circuits; Microelectronics; Pulse measurements; Stress; Voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1999. International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-5620-9
DOI :
10.1109/VTSA.1999.786007
