DocumentCode :
3066588
Title :
On the use of Fowler-Nordheim stress to reveal plasma-charging damage
Author :
Cheung, Kin P.
Author_Institution :
AT&T Bell Laboratories
fYear :
1996
fDate :
14-14 May 1996
Firstpage :
11
Lastpage :
14
Keywords :
Annealing; Antenna measurements; Charge carrier processes; Electron traps; Interface states; Plasma devices; Plasma measurements; Plasma temperature; Stress measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1996 1st International Symposium on
Conference_Location :
Santa Clara, CA, USA
Print_ISBN :
0-9651577-0-9
Type :
conf
DOI :
10.1109/PPID.1996.715192
Filename :
715192
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3066588
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