Title :
A novel UV baking process to improve DUV photoresist hardness
Author :
Hunag, C.S. ; Tsui, B.Y. ; Shieh, H.H. ; Mohondro, Robert
Author_Institution :
Etching & Process Integration Dept., ERSO/ITRI, Hisnchu, Taiwan
Abstract :
A new baking gas using a mixture of NH3 and N2 gases can effectively reduce the photoresist thickness shrinkage, CD variation and footing during the UV-bake DUV photoresist hardening process has been developed. After this UV baking process, a higher etch selectivity to photoresist and better CD control and profile processing can be achieved in high density plasma (HDP) dry etchers for applications to 0.2 μm contact holes with aspect-ratio greater than 5 and 0.22 μm aluminum metal lines with aspect-ratio of 2.5
Keywords :
ammonia; gas mixtures; integrated circuit metallisation; nitrogen; photochemistry; photoresists; radiation hardening; sputter etching; ultraviolet lithography; 0.2 mum; 0.22 mum; 248 nm; Al; Al metal lines; CD control; CD variation; DUV photoresist hardness; NH3-N2; NH3-N2 gas mixture; UV baking process; aspect-ratio; baking gas; chemically amplified resists; contact holes; high density plasma dry etchers; photoresist etch selectivity; photoresist thickness shrinkage; Aluminum; Dry etching; Gases; Plasma applications; Plasma density; Plasma devices; Process control; Resists; Thickness measurement; Tin;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1999. International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-5620-9
DOI :
10.1109/VTSA.1999.786019
