DocumentCode

3068002

Title

Estimating RIE Damage by the FLECharacteristics of Bipolar Transistors

Author

Nakanishi, Toshio ; Nagami, Akira ; Okumura, Nobuo

Author_Institution

Sumitomo Metal Industries, Ltd.

fYear

1996

fDate

14-14 May 1996

Firstpage

37

Lastpage

40

Keywords

Bipolar transistors; Charge carrier processes; Energy states; Etching; Laboratories; Metals industry; P-n junctions; Radiative recombination; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 1996 1st International Symposium on

Conference_Location

Santa Clara, CA, USA

Print_ISBN

0-9651577-0-9

Type

conf

DOI

10.1109/PPID.1996.715198

Filename

715198