• DocumentCode
    3068693
  • Title

    Delamination of thin Si layer in the H+ implanted Si for the manufacture of SOI Si wafer-fundamental phenomena and the properties of the delaminated Si layers

  • Author

    Hara, Tohru

  • Author_Institution
    Electr. Eng., Hosei Univ., Koganei, Japan
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    753
  • Lastpage
    756
  • Abstract
    This paper reviews the delamination of thin Si layer in H+ implanted Si layers. Layer properties of the device Si layer were measured by minority carrier lifetime technique
  • Keywords
    carrier lifetime; delamination; elemental semiconductors; hydrogen; ion implantation; minority carriers; proton effects; silicon; silicon compounds; silicon-on-insulator; H+ implanted Si; H+ implanted Si layers; SOI Si wafer; Si:H-SiO2; delaminated Si layers; delamination; minority carrier lifetime technique; review; thin Si layer; Annealing; Atomic layer deposition; Atomic measurements; Delamination; Ion implantation; Manufacturing processes; Pulp manufacturing; Silicon carbide; Silicon on insulator technology; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-4306-9
  • Type

    conf

  • DOI
    10.1109/ICSICT.1998.786121
  • Filename
    786121
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3068693