Title :
The influence of punch-through in lowly doped collector on base for npn SiGe base HBTs with high fT
Author :
Kong, Deyi ; Li, Yao ; Wei, Tongli ; Nie, Weidong ; Qian, Wensheng
Author_Institution :
Microelectron. Center, Southeast Univ., Nanjing, China
Abstract :
In this paper, we have presented quantitative expressions of the collector space-charge-region (SCR) width of SiGe base HBTs with a lowly doped punch-through collector. Calculated results show a discontinuity occurs at the critical point between no punch-through and punch-through. The influence of the discontinuity on base and frequency performance has been discussed, Conclusions from our work may be also applicable to Si-BJTs
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; SiGe; collector space-charge-region width; discontinuity; lowly doped collector; npn SiGe base HBTs; punch-through; Capacitance; Cutoff frequency; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; Silicon germanium; Substrates; Thyristors; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.786138
