Title :
Epitaxial growth of CeO2(100) films on Si(100) substrates by dual ion beam reactive sputtering
Author :
Kang, F. ; Xiong, G.C. ; Lian, G.J. ; Wang, Y.Y. ; Han, R.Q.
Author_Institution :
Inst. of Microelectron., Beijing Univ., China
Abstract :
The epitaxial growth of CeO2(100) films on (100) silicon substrates by dual ion beam sputtering has been studied. The measurements of X-ray θ-2θ pattern, φ-scan, and rocking curve indicated that the CeO2 films had good epitaxial characteristics with (100) orientation. The influences of the substrate temperature, the oxygen pressure, and amorphous SiO2 layer of the Si substrate surface on the epitaxial growth of the CeO2 layer were investigated
Keywords :
cerium compounds; crystal structure; dielectric thin films; elemental semiconductors; silicon; sputter deposition; vapour phase epitaxial growth; φ-scan; (100) orientation; CeO2; CeO2(100) films; Si; Si(100) substrates; SiO2; X-ray &thetas;-2&thetas; pattern; amorphous SiO2 layer; dual ion beam reactive sputtering; epitaxial growth; oxygen pressure; rocking curve; substrate temperature; Amorphous materials; Crystallization; Dielectric substrates; Epitaxial growth; Ion beams; Semiconductor films; Silicon on insulator technology; Sputtering; Temperature; X-ray scattering;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.786190
