Title :
A New Methodology for Monitoring and Comparing Edge Exposure and Plasma Charging Current Damage from Plasma Processing
Author :
Fonash, S.J. ; Ozaita, M. ; Okandan, M. ; Awadelkarim, O.O. ; Chan, Y.D.
Author_Institution :
Pennsylvania State University
Keywords :
Annealing; Etching; MOSFETs; Monitoring; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Stress; Voltage;
Conference_Titel :
Plasma Process-Induced Damage, 1996 1st International Symposium on
Conference_Location :
Santa Clara, CA, USA
Print_ISBN :
0-9651577-0-9
DOI :
10.1109/PPID.1996.715208
