Broadband Noise Performance of Heterogeneously Integrated InP BiCMOS DHBTs

Author

Bardin, Joseph C. ; Coskun, Ahmet Hakan ; Ayata, Metin ; Boynton, Zachariah G. ; Li, James C.

Author_Institution

Univ. of Massachusetts at Amherst, Amherst, MA, USA

Volume

35

Issue

10

fYear

2014

fDate

Oct. 2014

Firstpage

998

Lastpage

1000

Abstract

The noise performance of an InP BiCMOS process is presented. The process builds on IBM 90-nm RF CMOS and features heterogeneously integrated 250-nm InP DHBTs with f_t/fmax values of ~300 GHz. Noise models have been extracted and the predicted performance agrees well with measurement. The results indicate that this technology is an excellent option for future millimeter-wave low-noise applications.

Keywords

BiCMOS integrated circuits; III-V semiconductors; MOSFET; heterojunction bipolar transistors; indium compounds; integrated circuit modelling; integrated circuit noise; semiconductor device models; semiconductor device noise; IBM RF CMOS; InP; RF CMOS; broadband noise performance; heterogeneously integrated BiCMOS DHBT; millimeter-wave low-noise application; size 250 nm; size 90 nm; Broadband communication; Current density; Double heterojunction bipolar transistors; Indium phosphide; Noise; Performance evaluation; Scattering parameters; Millimeter wave transistors; low-noise amplifiers; semiconductor device noise;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2343942

Filename

6879316