Title :
MOVPE growth of InGaAs on InP using tertiarybutylarsine
Author :
Abdalla, M.I. ; Kenneson, D. ; Powazinik, W.
Author_Institution :
GTE Labs. Inc., Waltham, MA, USA
Abstract :
The growth by low-pressure metalorganic vapor phase epitaxy (MOVPE) of lattice-matched InGaAs on InP substrates using tertiarybutylarsine (TBA) as the arsenic source is reported. The grown layers were uniform in composition and are consistently n-type with low background carrier concentration (2-3*10/sup 15//cm/sup 3/). Room temperature mobility as high as 11200 cm/sup 2//V-s with a corresponding 77 K mobility of 57000 cm/sup 2//V-s was measured. Photoluminescence (20 K) gave a strong narrow peak (FWHM=3.1 meV) with no evidence of carbon incorporation.<>
Keywords :
III-V semiconductors; carrier mobility; gallium arsenide; indium compounds; semiconductor growth; vapour phase epitaxial growth; InGaAs; InP; InP substrates; MOVPE growth; carrier concentration; carrier mobility; composition uniformity; low-pressure metalorganic vapor phase epitaxy; n-type; photoluminescence; tertiarybutylarsine; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gases; Indium gallium arsenide; Indium phosphide; Inductors; Lattices; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.202996
