OMVPE of InP-based structures for photonic devices

Author

Carey, Kent

Author_Institution

Hewlett-Packard Lab., Palo Alto, CA, USA

fYear

1990

fDate

23-25 April 1990

Firstpage

122

Abstract

Summary form only given. An overview of the techniques important for organometallic vapor-phase epitaxy (OMVPE) of InP and related materials was presented. Switching schemes to obtain abrupt interfaces that avoid film decomposition and formation of the intermediate compound InAs and minimize formation of other intermediate compounds such as InAsP were considered. Atmospheric and low-pressure growth of InP compounds were contrasted for the growth of InP-based materials. Techniques that are important for optoelectronic integrated circuits (OEICs) and photonic integrated circuits (PICs) such as epitaxial regrowth and selective area growth were also discussed.<>

Keywords

III-V semiconductors; indium compounds; integrated optoelectronics; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; InAs intermediate compounds; InAsP; InP; OEIC; OMVPE; PIC; abrupt interfaces; atmospheric growth; epitaxial regrowth; film decomposition; low-pressure growth; optoelectronic integrated circuits; organometallic vapor-phase epitaxy; photonic integrated circuits; selective area growth; semiconductors; switching schemes; Artificial intelligence; Epitaxial growth; Indium phosphide; Laboratories; Photonic integrated circuits; Semiconductor thin films; Temperature control; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.202999

Filename

202999