Title :
High rate growth of Ga/sub 0.47/In/sub 0.53/As/InP by chemical beam epitaxy
Author :
Uchida, T. ; Uchida, T. ; Mise, K. ; Yokouchi, N. ; Koyama, F. ; Iga, K.
Author_Institution :
Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
High growth rates have been obtained for Ga/sub 0.47/In/sub 0.53/As and InP using chemical beam epitaxy. The GaInAs growth rate was controlled over the range from 1.2 to 6 mu m/h, the latter being the highest growth rate obtained without sacrificing the optical and electrical properties of the crystal. Good thickness controllability was demonstrated by growing multi-quantum-wells at growth rates of 5.15 and 2.5 mu m/h. An emission wavelength shift from 1.56 mu m to 1.1 mu m was observed in room temperature photoluminescence measurements. Based on X-ray spectra satellite peaks, well widths associated with these wavelength ranged from 80 AA to 10 AA. The results agree with theoretical calculations and show good thickness controllability and wavelength tunability at high growth rates.<>
Keywords :
X-ray diffraction examination of materials; chemical beam epitaxial growth; gallium arsenide; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; Ga/sub 0.47/In/sub 0.53/As-InP; InP substrate; X-ray spectra satellite peaks; chemical beam epitaxy; electrical properties; emission wavelength shift; growth rates; multi-quantum well; room temperature photoluminescence; semiconductor; thickness controllability; wavelength tunability; Chemicals; Controllability; Epitaxial growth; Indium phosphide; Molecular beam epitaxial growth; Optical control; Photoluminescence; Stimulated emission; Temperature measurement; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203005
