Integrated InP/InGaAs HBT preamplifier for an optical receiver

Author

Chandrasekhar, S. ; Johnson, B. ; Tokumitsu, E. ; Dentai, A. ; Joyner, C. ; Gnauck, A. ; Perino, J. ; Qua, G. ; Burrus, C.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

fYear

1990

fDate

23-25 April 1990

Firstpage

171

Lastpage

174

Abstract

Heterojunction bipolar transistors (HBTs) in the InP/InGaAs material system have been integrated, for the first time, into a transimpedance preamplifier circuit suitable for long wavelength photoreceivers. The preamplifier was also integrated with an InP/InGaAs p-i-n photodetector to realize a monolithic optical receiver. Both circuits had a bandwidth of 500 MHz and operated at 1 Gb/s with an optical sensitivity of -25.5 dBm for the preamplifier connected to an external photodetector and -26.1 dBm for the monolithic photoreceiver. The results demonstrate that there is no compromise in performance as a result of the monolithic integration.<>

Keywords

III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical communication equipment; photodetectors; preamplifiers; receivers; 1 Gbit/s; 500 MHz; InP-InGaAs heterojunction bipolar transistors; bandwidth; integrated HBT preamplifier; long wavelength photoreceivers; monolithic integration; monolithic optical receiver; monolithic photoreceiver; optical sensitivity; p-i-n photodetector; semiconductors; transimpedance preamplifier circuit; Bandwidth; Circuits; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optical materials; Optical receivers; PIN photodiodes; Photodetectors; Preamplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203010

Filename

203010