DocumentCode :
3072682
Title :
Selective liquid phase epitaxial growth of InP on silicon
Author :
Collins, Sandra ; Barnett, Allen ; Hannon, Margaret ; Joannides, Jonah
Author_Institution :
AstroPower Inc., Newark, DE, USA
fYear :
1990
fDate :
23-25 April 1990
Firstpage :
199
Lastpage :
202
Abstract :
A fabrication technique called SLPE (selective liquid phase epitaxy) is described for growing InP films on silicon substrates. SLPE is expected to limit the propagation of dislocations in two ways: the LPE process itself terminates dislocations at the growth interface, and contact between the substrate and the growth material is limited by a selective silicon dioxide mask. Currently, this mask is composed of 5- mu m silicon dioxide strips limiting the contact area to 20- mu m strips of silicon. Single-crystal InP has been grown directly on silicon substrates. A 1-2- mu m nucleation enhancement (NE) layer is grown selectively between the silicon dioxide stripes, directly contacting the silicon substrate. The InP LPE film nucleates from this NE layer and growth proceeds vertically and laterally to overgrow the silicon dioxide mask.<>
Keywords :
III-V semiconductors; dislocation motion; indium compounds; liquid phase epitaxial growth; nucleation; semiconductor epitaxial layers; semiconductor growth; 5 micron; InP; LPE process; SLPE; Si substrate; SiO/sub 2/ mask; dislocation propagation; fabrication technique; nucleation enhancement layer; selective liquid phase epitaxial growth; semiconductor; Costs; Epitaxial growth; Geometry; Indium phosphide; Semiconductor films; Semiconductor thin films; Silicon compounds; Strips; Substrates; Surface morphology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
Type :
conf
DOI :
10.1109/ICIPRM.1990.203016
Filename :
203016
Link To Document :
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