Title :
Control of a reactive ion etching process for InP and related materials by in-situ ellipsometry in the near infrared
Author_Institution :
Heinrich-Hertz-Inst. fuer Nachrichtentech. Berlin GmbH, Germany
Abstract :
The use of in-situ ellipsometry at a wavelength of 1300 nm for etch depth measurement and endpoint detection during reactive ion etching (RIE) of InGaAs(P)/InP heterostructures is reported. The basic principle and the experimental technique are briefly described. It is shown that etch depth monitoring and endpoint detection can be performed as low as 0.1. Furthermore, the method has been used for in-situ measurement of the wafer temperature during plasma exposure.<>
Keywords :
III-V semiconductors; ellipsometry; gallium arsenide; gallium compounds; indium compounds; process control; spatial variables measurement; sputter etching; temperature measurement; 1300 nm; InGaAsP-InP heterostructure; depth monitoring; endpoint detection; etch depth measurement; in-situ ellipsometry; in-situ measurement; near infrared; plasma exposure; reactive ion etching process control; semiconductors; wafer temperature; Ellipsometry; Etching; Indium gallium arsenide; Indium phosphide; Optical films; Plasma applications; Plasma displays; Plasma materials processing; Substrates; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location :
Denver, CO, USA
DOI :
10.1109/ICIPRM.1990.203019
