Evaluation of lattice mismatched InGaAs layers and photodiode arrays by scanning photoluminescence

Author

Krawczyk, S. ; Schohe, K. ; Klingelhöfer, C. ; Vilotitch, B. ; Lenoble, C. ; Villard, M. ; Hugon, X. ; Regaud, D. ; Ducroquet, F.

Author_Institution

Lab. d´´Electron., Ecole Centrale de Lyon, Ecully, France

fYear

1990

fDate

23-25 April 1990

Firstpage

265

Lastpage

268

Abstract

Scanning photoluminescence (SPL) measurements were used to characterize lattice-mismatched InGaAs/InP heterostructures and to study the correlation between the results of the SPL measurements and the electrical characteristics of the completed p-i-n photodiodes made with this material. Mismatch dislocations, isolated dislocations, and short- and long-range nonuniformities were revealed. Correlations between the results obtained by SPL and the reverse current of the fabricated photodiodes were observed. The defect creation in the epitaxial layers is extremely sensitive to small variations of the process conditions.<>

Keywords

III-V semiconductors; dislocations; gallium arsenide; indium compounds; luminescence of inorganic solids; p-i-n diodes; photodiodes; photoluminescence; semiconductor epitaxial layers; InGaAs-InP heterostructures; defect creation; electrical characteristics; epitaxial layers; isolated dislocations; lattice mismatched layers; long-range nonuniformities; mismatch dislocations; p-i-n photodiodes; photodiode arrays; reverse current; scanning photoluminescence; short-range nonuniformities; Dark current; Diodes; Electric variables; Electric variables measurement; Indium gallium arsenide; Indium phosphide; Lattices; Photodiodes; Photoluminescence; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203029

Filename

203029