InP MISFET capabilities for microwave power amplification

Author

Fellon, P. ; De Jaeger, J. ; Crosnier, Y.

Author_Institution

Centre Hyperfrequencies et Semicond., Villeneuve d´´Ascq, France

fYear

1990

fDate

23-25 April 1990

Firstpage

316

Lastpage

319

Abstract

A theoretical study to establish the behavior and the power amplification capabilities of the InP MISFET is described. Two numerical models are used. The first model is a two-dimensional simulation based on Poisson´s equation, and the current equation is supposed equal to zero. A second simulation uses a pseudo-two-dimensional model and entails a lighter computational burden. The validity of the results is verified by experimental measurements. Results obtained for the maximum drain current, the breakdown voltage, and the microwave properties show that the InP MISFET is a very interesting alternative for microwave power amplification.<>

Keywords

III-V semiconductors; indium compounds; insulated gate field effect transistors; power transistors; semiconductor device models; solid-state microwave devices; InP; MISFET; Poisson´s equation; breakdown voltage; maximum drain current; microwave power amplification; numerical models; pseudo-two-dimensional model; two-dimensional simulation; Charge carrier density; Electric breakdown; Electron mobility; Indium phosphide; Insulation; MISFETs; Microwave devices; Nonlinear equations; Poisson equations; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203039

Filename

203039