A new InP Schottky diode using a photo-CVD grown phosphorus-nitride film

Author

Jeong, Y.H. ; Kim, G. ; Kim, S.

Author_Institution

Dept. of Electr. Eng., Pohang Inst. of Sci. & Technol., South Korea

fYear

1990

fDate

23-25 April 1990

Firstpage

344

Lastpage

347

Abstract

The enhancement of Schottky barrier height on InP substrate using a phosphorus nitride (P/sub 3/N/sub 5/) layer grown by a direct photo-CVD process with a gas mixture of PCl/sub 3/ and NH/sub 3/ was studied. An Au Schottky diode with a 50-AA intermediate layer showed a barrier height of 0.81 eV, an ideality factor of 1.08, and reverse leakage of 5.0*10/sup -8/ AA/cm/sup 2/ at 1 V voltage. The breakdown voltage was larger than 30 V. X-ray photoelectron spectra of the P/sub 3/N/sub 5//InP interfaces showed that the reduction of P-O-N compounds at the interface is responsible for the reduction of reverse leakage current and the enhancement of the barrier height.<>

Keywords

III-V semiconductors; Schottky-barrier diodes; X-ray photoelectron spectra; chemical vapour deposition; indium compounds; leakage currents; phosphorus compounds; InP substrate; InP-Au; InP-P/sub 3/N/sub 5/; NH/sub 3/; PCl/sub 3/; PCl/sub 3/-NH/sub 3/ mixture; Schottky barrier height; Schottky diode; X-ray photoelectron spectra; breakdown voltage; ideality factor; photo-CVD process; reverse leakage; Chemical vapor deposition; Etching; Gold; Indium phosphide; Insulation; Lamps; MESFETs; Schottky barriers; Schottky diodes; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203045

Filename

203045