Performance characteristics of buried facet optical amplifiers

Author

Lin, M. ; Piccirilli, A. ; Dutta, N.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

fYear

1990

fDate

23-25 April 1990

Firstpage

359

Lastpage

362

Abstract

The fabrication and performance characteristics of buried-facet optical amplifiers are described. Chip gain of >25 dB, gain ripple of <1 dB, and gain difference of <1 dB for TE and TM polarized light are observed. The gain ripple and polarization dependence of gain correlate well with the ripple and polarization dependence of the amplified spontaneous emission spectrum. Although the performance of buried-facet amplifiers is found to be comparable to that of cleaved facet amplifiers with very good antireflection (R<10/sup -4/) coatings, the buried-facet design reduces the requirement on antireflection coatings and makes the fabrication process more reproducible.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; superradiance; 25 dB; InGaAsP-InP; InP substrate; TE polarized light; TM polarized light; amplified spontaneous emission spectrum; antireflection coatings; buried facet optical amplifiers; chip gain; fabrication process; gain difference; gain ripple; performance characteristics; Gain; MOCVD; Optical amplifiers; Optical buffering; Optical device fabrication; Optical fiber polarization; Optical polarization; Repeaters; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203048

Filename

203048