LEC growth and structural characterization of low-EPD co-doped indium phosphide

Author

Fornari, R. ; Franzosi, P. ; Kumar, J. ; Salviati, G.

Author_Institution

MASPEC-CNR Inst., Parma, Italy

fYear

1990

fDate

23-25 April 1990

Firstpage

238

Lastpage

241

Abstract

InP bulk crystals double-doped with Cd and S were investigated in depth by scanning electron microscopy, transmission electron microscopy, and X-ray topography. The investigations confirm that InP:(CdS) presents a lower dislocation density than other n-type material with the same carrier concentration but that it contains two additional microdefects, namely, large and small precipitates that are seen to pin the dislocation lines and to prevent their propagation. The bigger particles appear to be crystalline CdS. The nature of the small particles is not clear.<>

Keywords

III-V semiconductors; X-ray diffraction examination of materials; cadmium; crystal growth from melt; dislocation density; dislocation pinning; indium compounds; precipitation; scanning electron microscope examination of materials; semiconductor growth; sulphur; transmission electron microscope examination of materials; InP:Cd, S; LEC growth; X-ray topography; carrier concentration; dislocation density; dislocation line pinning; microdefects; precipitates; scanning electron microscopy; structural characterization; transmission electron microscopy; Cadmium; Crystallization; Crystals; Doping; Etching; Indium phosphide; Scanning electron microscopy; Surfaces; Thermal stresses; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203067

Filename

203067