Title :
Thermal and electromigration challenges for advanced interconnects
Author :
Li, Baozhen ; Harmon, Dave ; Gill, Jason ; Chen, Fen ; Sullivan, Timothy
Author_Institution :
Semicond. Technol. Reliability, IBM Syst. & Technol. Group, Essex Junction, VT, USA
Abstract :
The combination of low k dielectric material application and aggressive scaling in advanced interconnects creates new challenges for thermal and electromigration solutions. The complexity and difficulty are discussed for modeling and evaluating thermal and EM interactions in circuit designs. A few examples are given to show quantitatively the impact of different dielectric materials on maximum allowed current density and scaling in Cu lines.
Keywords :
copper; current density; dielectric thin films; electromigration; integrated circuit interconnections; integrated circuit reliability; thermal resistance; Cu; electromigration; interconnects; joule heating effects; low k dielectric materials; maximum allowed current density; maximum scaling; metal line current carrying capacity; reliability; thermal conductivity; thermal-EM interactions; Dielectric materials; Dielectric substrates; Electromigration; Equations; Heat sinks; Resistance heating; Shape; Temperature; Thermal conductivity; Thermal resistance;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2004 IEEE International
Print_ISBN :
0-7803-8517-9
DOI :
10.1109/IRWS.2004.1422737
