Title :
Plasma doping for ultra-shallow junctions
Author :
Chan, Chung ; Qin, Shu
Author_Institution :
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
Abstract :
Plasma doping (PD) processes utilizing PH3/He and B2H4/He plasmas to fabricate CMOS devices are presented. The applications of PD in ultra-shallow junctions are discussed. Low contamination levels and good device characteristics were achieved
Keywords :
CMOS integrated circuits; integrated circuit technology; ion implantation; plasma applications; semiconductor doping; B2H4/He plasma; CMOS device fabrication; PH3/He plasma; contamination level; plasma doping; ultra-shallow junction; CMOS process; Contamination; Doping; Helium; Magnetic confinement; Plasma applications; Plasma confinement; Plasma density; Plasma devices; Plasma immersion ion implantation; Plasma measurements; Plasma properties; Plasma sources; Plasma temperature;
Conference_Titel :
Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong
Print_ISBN :
0-7803-3802-2
DOI :
10.1109/HKEDM.1997.642026
