DocumentCode
3073576
Title
Electromigration of MRAM-customized Cu interconnects with cladding barriers and top cap
Author
Gajewski, Donald A. ; Meixner, Tom ; Feil, Bill ; Lien, Mitch ; Walls, James
Author_Institution
Freescale Semicond., Chandler, AZ, USA
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
90
Lastpage
93
Abstract
This paper demonstrates the electromigration (EM) performance of MRAM-customized Cu interconnects with cladding barriers and top cap. The results show that the barriers and top cap significantly improved the EM performance compared to conventional Cu processes.
Keywords
copper; electromigration; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit reliability; magnetic storage; magnetoresistive devices; random-access storage; Cu; MRAM top cap; MRAM-customized interconnects; activation energy; cladding barriers; electromigration; flux concentrating cladding; magnetoresistive random access memory; Current density; Current measurement; Dielectric measurements; Electromigration; Electrons; Equations; Heating; Stress measurement; Temperature measurement; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2004 IEEE International
Print_ISBN
0-7803-8517-9
Type
conf
DOI
10.1109/IRWS.2004.1422746
Filename
1422746
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