DocumentCode :
3073621
Title :
Anomalous NMOSFET hot carrier degradation due to hole injection in a DGO CMOS process
Author :
Brisbin, Douglas ; Mirgorodski, Yuri ; Chaparala, Prasad
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
fYear :
2004
fDate :
18-21 Oct. 2004
Firstpage :
102
Lastpage :
108
Abstract :
It has been reported that MOSFET hot carrier (HC) performance is degraded by back-end-of-line (BEOL) processing steps such as interlayer dielectric film deposition, passivation, and H2 annealing. These effects are associated with the incorporation of additional hydrogen at the Si-SiO2 interface states to passivate dangling bonds. This paper focuses on an unusual (anomalous) IDsat HC degradation behavior seen on a dual gate oxide (DGO) NMOSFET device that was determined to be caused by a dielectric (SiON) contact etch stop process step. This paper presents a novel NMOSFET HC degradation behavior model based on HC injected positive trapped charge that is spatially separated from the normal HC trapped electron charge. This paper shows that this charge separation and positive charge injection creates a secondary impact ionization site that is within the device channel and results in anomalous and accelerated IDsat HC degradation behavior.
Keywords :
MOSFET; charge injection; etching; hole traps; hot carriers; impact ionisation; interface states; semiconductor device measurement; semiconductor device models; semiconductor device reliability; DGO CMOS process; HC degradation behavior model; HC injected positive trapped charge; Si-SiO2; SiON; anomalous NMOSFET hot carrier degradation; back-end-of-line processing steps; dangling bond passivation; dielectric contact etch stop process; dual gate oxide NMOSFET; hole injection; hot carrier reliability; interface states; positive charge injection; secondary impact ionization site; Annealing; CMOS process; Degradation; Dielectric films; Electron traps; Hot carriers; Hydrogen; Interface states; MOSFET circuits; Passivation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2004 IEEE International
Print_ISBN :
0-7803-8517-9
Type :
conf
DOI :
10.1109/IRWS.2004.1422749
Filename :
1422749
Link To Document :
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