Atomic scale defects involved in NBTI [MOSFET reliability]

Author

Campbell, J.P. ; Lenahan, P.M. ; Krishnan, A.T. ; Krishnan, S.

Author_Institution

Pennsylvania State Univ., University Park, PA, USA

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

118

Lastpage

120

Abstract

The atomic scale defect physics responsible for the negative bias temperature instability (NBTI) phenomenon are not well understood. In this study, we use a highly sensitive form of electron spin resonance (ESR) called spin dependent recombination (SDR) to investigate the chemical and physical nature of the defects responsible for NBTI. We show that P_b0 centers, and Si/SiO₂ interface silicon dangling bond defects, play a major role in the interface state generation process in NBTI.

Keywords

MOSFET; dangling bonds; electron-hole recombination; interface states; paramagnetic resonance; semiconductor device measurement; semiconductor device reliability; thermal stability; ESR; MOSFET reliability; NBTI; P_b0 centers; SDR; Si-SiO₂; atomic scale defects; electron spin resonance; interface silicon dangling bond defects; interface state generation process; negative bias temperature instability; spin dependent recombination; Bonding; Chemicals; MOSFET circuits; Negative bias temperature instability; Niobium compounds; Paramagnetic resonance; Physics; Silicon; Spontaneous emission; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2004 IEEE International

Print_ISBN

0-7803-8517-9

Type

conf

DOI

10.1109/IRWS.2004.1422752

Filename

1422752