Qualification and Characterization of SRAM Memories Used as Radiation Sensors in the LHC

Author

Danzeca, S. ; Spiezia, G. ; Brugger, M. ; Dusseau, L. ; Foucard, G. ; Alia, R. Garcia ; Mala, P. ; Masi, A. ; Peronnard, P. ; Soltes, J. ; Thornton, A. ; Viererbl, L.

Author_Institution

Eur. Organ. for Nucl. Res., Geneva, Switzerland

Volume

61

Issue

6

fYear

2014

fDate

Dec. 2014

Firstpage

3458

Lastpage

3465

Abstract

An 8 Mbit 90-nm memory is proposed as a new high energy hadron fluence sensor. The obtained cross sections for protons (30 MeV up to 480 MeV) and thermal neutrons as well as their dependency on the TID together with the control circuitry is presented. Burst events were recorded during irradiation and an analysis on the causes has been performed proposing an algorithm to mitigate and correct the burst multiple events. Finally, the effects of the energy dependency on the measurements in the LHC mixed radiation field are discussed.

Keywords

SRAM chips; radiation hardening (electronics); semiconductor device testing; sensors; LHC mixed radiation field; SRAM memories; TID; burst multiple events; control circuitry; electron volt energy 30 MeV to 480 MeV; high energy hadron fluence sensor; large hadron collider; radiation sensors; size 90 nm; thermal neutrons; Ionizing radiation sensors; Large Hadron Collider; Radiation effects; SRAM cells; Semiconductor device measurement; Single event upsets; Test facilities; Large hadron collider (LHC) radiation monitoring; SRAM; single event upsets (SEU) monitor; single-event effects (SEEs); single-event effects (SEEs) characterization; test facilities;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2365042

Filename

6949151