Electrical model analysis of RF/high-speed performance for different designed TSV patterns by wideband double side measurement techniques

Author

Chun-Hsun Lin ; Liu, Cong ; Hsin-Kai Huang ; Kuang-Ching Fan ; Hsin-Hung Lee

Author_Institution

Adv. Product Design & Testing Dept., Siliconware Precision Ind. Co., Ltd., Taichung, Taiwan

fYear

2012

fDate

24-26 Oct. 2012

Firstpage

72

Lastpage

75

Abstract

Within this paper, four different pitches of Through Silicon Via (TSV) of single-ended ground-signal-ground (GSG) signaling configuration with redistribution layer (RDL) and testing pad that ranging from 20 μm, 50 μm, 100 μm to 200 μm has been made to verify the Radio-Frequency (RF) characteristic of TSV. We propose the modified RF electrical equivalent model of TSV with its´ de-embed patterns. With the help of the direct double side probing system, wide band measurement of S-parameters of up to 40 GHz and eye-diagrams of 40 Gb/s signal are made to validate the modeled results.

Keywords

S-parameters; integrated circuit modelling; integrated circuit testing; microwave integrated circuits; millimetre wave integrated circuits; three-dimensional integrated circuits; RF performance; S-parameters; TSV pattern; bit rate 40 Gbit/s; deembed patterns; electrical model analysis; eye diagrams; frequency 40 GHz; high-speed performance; radio frequency characteristic; redistribution layer; single ended ground-signal-ground signaling; size 100 mum to 200 mum; size 20 mum; size 50 mum; testing pad; wideband double side measurement techniques; Mathematical model; Pollution measurement; Radio frequency; Silicon; Substrates; Testing; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2012 7th International

Conference_Location

Taipei

ISSN

2150-5934

Print_ISBN

978-1-4673-1635-4

Electronic_ISBN

2150-5934

Type

conf

DOI

10.1109/IMPACT.2012.6420279

Filename

6420279