DocumentCode
3074419
Title
Parasitic bipolar transistor effect in poly-Si thin film transistor
Author
Liu, Xiaoyan ; Guan, Xudong ; Han, Ruqi
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
fYear
1998
fDate
1998
Firstpage
853
Lastpage
855
Abstract
A simple physical model is developed to describe the parasitic bipolar transistor effect when a polysilicon thin film transistor works in the off state. By using the model, the relations of leakage current with terminal voltage and temperature of the TFT can be obtained
Keywords
elemental semiconductors; leakage currents; semiconductor device models; silicon; thin film transistors; Si; leakage current; off state; parasitic bipolar transistor effect; physical model; poly-Si thin film transistor; terminal voltage; Bipolar transistors; Charge carrier processes; Electron emission; Grain boundaries; Leakage current; Microelectronics; Silicon; Temperature; Thin film transistors; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.786460
Filename
786460
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