InP-based bipolar phototransistors for microwave photonic applications

Author

Gonzalez, Carmen

Author_Institution

Lab. OPTO+, Alcatel R&D, Marcoussis, France

fYear

2003

fDate

10-12 Sept. 2003

Firstpage

99

Lastpage

104

Abstract

Fast optical detectors or optically controlled microwave devices are key elements of microwave photonic systems. With the development and maturity of InP technology, the monolithic integration of high-speed devices, detectors and transistors, into optical receivers has flourished. In an effort to produce a photodetector with intrinsic gain and ability to be integrated directly into an optoelectronic monolithic integrated circuit (OEMIC) with heterojunction bipolar transistors (HBTs), heterojunction bipolar phototransistors (photo-HBTs) have been widely investigated, in this paper, we will survey the state of the art performance of InP photo-HBTs and circuits based on this device.

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; microwave detectors; microwave photonics; monolithic integrated circuits; photodetectors; phototransistors; InP; InP photo-HBT; InP technology; InP-based phototransistors; bipolar phototransistors; fast optical detectors; heterojunction bipolar phototransistors; heterojunction bipolar transistors; high-speed devices; intrinsic gain; microwave photonic applications; microwave photonic systems; monolithic integration; optical receivers; optically controlled microwave devices; optoelectronic monolithic integrated circuit; Control systems; High speed optical techniques; Indium phosphide; Microwave devices; Monolithic integrated circuits; Optical control; Optical detectors; Optical devices; Optical receivers; Phototransistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 2003. MWP 2003 Proceedings. International Topical Meeting on

Print_ISBN

0-7803-8691-4

Type

conf

DOI

10.1109/MWP.2003.1422837

Filename

1422837