• DocumentCode
    3076155
  • Title

    The impact of optical illumination on the breakdown characteristics of pHEMTs

  • Author

    Bourhill, N. ; Iezekiel, Stavros ; Steenson, D.P.

  • Author_Institution
    Sch. of Electron. & Electr. Eng., Leeds Univ., UK
  • fYear
    2003
  • fDate
    10-12 Sept. 2003
  • Firstpage
    259
  • Lastpage
    262
  • Abstract
    The impact of optical illumination on the breakdown characteristics of pHEMTs is investigated for the first time. Illumination is found to influence deep-level trap related currents in the pHEMTs under test when VDS > 2V.
  • Keywords
    deep levels; electric breakdown; electron traps; high electron mobility transistors; hole traps; lighting; photovoltaic effects; breakdown characteristics; deep-level trap; optical illumination; pHEMT; Avalanche breakdown; Electric breakdown; Electron traps; Gallium arsenide; Lighting; Microwave photonics; PHEMTs; Testing; Vertical cavity surface emitting lasers; Virtual manufacturing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Photonics, 2003. MWP 2003 Proceedings. International Topical Meeting on
  • Print_ISBN
    0-7803-8691-4
  • Type

    conf

  • DOI
    10.1109/MWP.2003.1422894
  • Filename
    1422894
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3076155