مرکز منطقه ای اطلاع رساني علوم و فناوري - Plasma-induced Oxide Contamination In a 0.35 μm CMOS Process

DocumentCode :

3076581

Title :

Plasma-induced Oxide Contamination In a 0.35 μm CMOS Process

Author :

Karnett, M. ; Zhou, J. ; Ghosh, Sudip ; Fritz, Leuterer ; Wu, Kaijie

Author_Institution :

VLSI Technology, Inc

fYear :

1996

fDate :

13-14 May 1996

Firstpage :

226

Lastpage :

229

Keywords :

CMOS process; Capacitors; Contamination; Electrons; MOS devices; Plasma confinement; Plasma devices; Process control; Strips; Threshold voltage;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Plasma Process-Induced Damage, 1996 1st International Symposium on

Print_ISBN :

0-9651577-0-9

Type :

conf

DOI :

10.1109/PPID.1996.715244

Filename :

715244

Link To Document :