DocumentCode :
3076734
Title :
Sub-quarter Micron Poly-Si Etching With Positive Pulse Biasing Technique
Author :
Kofuji, N. ; Tsujimoto, K. ; Mizutani, T.
Author_Institution :
Hitachi Ltd.
fYear :
1996
fDate :
14-14 May 1996
Firstpage :
234
Lastpage :
236
Keywords :
Electrons; Etching; Plasma applications; Plasma density; Plasma temperature; Power generation; Pulsed power supplies; Space vector pulse width modulation; Temperature control; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1996 1st International Symposium on
Conference_Location :
Santa Clara, CA, USA
Print_ISBN :
0-9651577-0-9
Type :
conf
DOI :
10.1109/PPID.1996.715246
Filename :
715246
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3076734
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