Polarization as a driving force in accelerated retention measurements on ferroelectric thin films

There has been an increase in the number of papers and research related to the study of retention measurement and interpretation of results in ferroelectric thin films as applied to non-volatile memory devices. Because it is impractical to measure the retention time directly, temperature is employed to accelerate the failure mechanisms. The magnitude of the polarization vector is the driving force for charge re-distribution in ferroelectric thin films but is itself, temperature dependent. Characterization results suggest that there is an optimum temperature at which maximum polarization compensation occurs. The experimental results introduced in this paper is meant to add to the growing knowledge base of retention characterization