• DocumentCode
    3076953
  • Title

    Process stability control of Pb(Zr,Ti)O3 ferroelectric thin film sputtering for FRAM application

  • Author

    Suu, K. ; Masuda, T. ; Nishioka, Y. ; Tani, N.

  • Author_Institution
    Inst. for Super Mater., ULVAC Japan Ltd., Chiba, Japan
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    19
  • Lastpage
    22
  • Abstract
    Pb(Zr,Ti)O3 (PZT) thin films have been fabricated by RF magnetron sputtering. Aiming at productional process development for ferroelectric RAM application, PZT films have been deposited on 6-inch substrates using a 12-inch ceramic target. High deposition rates up to 100 nm/min have been realized by utilizing a high-density PZT target. Flexible compositional control has been achieved by controlling sputtering conditions. A newly introduced electro-static chuck (ESC) type substrate cooling system has been found effective to improve stability of film composition of PZT sputtering
  • Keywords
    ferroelectric materials; ferroelectric storage; ferroelectric thin films; lead compounds; random-access storage; sputter deposition; FRAM application; PZT; Pb(Zr,Ti)O3 ferroelectric thin film sputtering; PbZrO3TiO3; RF magnetron sputtering; compositional control; electro-static chuck type substrate cooling system; film composition; high deposition rates; high-density PZT target; process stability control; sputtering conditions; stability; Ceramics; Cooling; Ferroelectric films; Nonvolatile memory; Process control; Radio frequency; Random access memory; Sputtering; Stability; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
  • Conference_Location
    Montreux
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-4959-8
  • Type

    conf

  • DOI
    10.1109/ISAF.1998.786626
  • Filename
    786626
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3076953