Title :
Enhancement of memory window in the metal/ferroelectric (YMnO3 )/insulator/semiconductor capacitor
Author :
Lee, Ho Nyung ; Kim, Yong Tae ; Lee, Chang Woo ; Choh, Sung Ho
Author_Institution :
Dept. of Phys., Korea Univ., Seoul, South Korea
Abstract :
We have investigated electrical properties of ferroelectric capacitors using Pt/YMnO3/Si and Pt/YMnO3/Y2 O3/Si structures. The YMnO3 thin film has c-axis oriented hexagonal structure after annealing at 900°C for 1 hr. C-V characteristics show that memory windows increase with the annealing temperature. Using Y2O3 films, we can reduce charge injection due to the electric field distribution between Y 2O3 and SiO2
Keywords :
MIS devices; annealing; ferroelectric capacitors; ferroelectric materials; ferroelectric storage; ferroelectric thin films; thin film capacitors; yttrium compounds; 1 hr; 900 degC; C-V characteristics; Pt; Pt/YMnO3/Si structure; Pt/YMnO3/Y2O3/Si structure; Si; Y2O3; YMnO3; YMnO3 thin film; annealing temperature; c-axis oriented hexagonal structure; charge injection; electric field distribution; electrical properties; ferroelectric capacitors; memory window; metal/ferroelectric/insulator/semiconductor capacitor; Capacitance-voltage characteristics; Capacitors; Dielectric thin films; Dielectrics and electrical insulation; Ferroelectric materials; Metal-insulator structures; Semiconductor thin films; Sputtering; Substrates; Voltage;
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
Print_ISBN :
0-7803-4959-8
DOI :
10.1109/ISAF.1998.786631
