Title :
Dielectric properties of (Ba,Sr)TiO3 thin films deposited on Ni/TiN/Si substrate by photo-assisted metal organic chemical vapor deposition
Author :
Chen, Y.M. ; Ritums, D. ; Wu, N.J. ; Ignatiev, A.
Author_Institution :
Space Vacuum Epitaxy Center, Houston Univ., TX, USA
Abstract :
High dielectric strontium titanium oxide (STO) and barium strontium titanium oxide (BST) films have been deposited by photo-assisted metal organic chemical vapor deposition (PhAMOCVD) on Si(100) with Ni/TiN metallic buffer layers. The dielectric properties of capacitors based on the Ag/(Ba,Sr)TiO3/Ni/TiN/Si(100) heterostructure exhibited dielectric constants of from 300 to 600. Test structures of 3-D capacitors were fabricated using high permittivity MOCVD (Ba,Sr)TiO3 thin films deposited on the sidewalls of 3-D Ni/TiN electrodes patterned by reactive ion etching
Keywords :
MOCVD coatings; barium compounds; ferroelectric capacitors; ferroelectric materials; ferroelectric thin films; permittivity; sputter etching; strontium compounds; (Ba,Sr)TiO3 thin films; (BaSr)TiO3; Ag/(Ba,Sr)TiO3/Ni/TiN/Si(100) heterostructure; Ni/TiN/Si substrate; Si(100); capacitors; dielectric constants; dielectric properties; high permittivity; photo-assisted metal organic chemical vapor deposition; reactive ion etching; Barium; Binary search trees; Buffer layers; Capacitors; Chemical vapor deposition; Dielectric thin films; Organic chemicals; Strontium; Tin; Titanium;
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
Print_ISBN :
0-7803-4959-8
DOI :
10.1109/ISAF.1998.786632
