• DocumentCode
    3078615
  • Title

    Four kinds domain study of pure and Mn-doped PbTiO3 single crystals by atomic force and Kelvin force microscopy

  • Author

    Yamamoto, Takashi ; Omika, Shinobu

  • Author_Institution
    Dept. of Electr. Eng., Nat. Defense Acad., Yokosuka, Japan
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    411
  • Lastpage
    414
  • Abstract
    Surface gradients and electrical potentials of 90° a-c and 180° c-c domains of pure, Mn-doped PbTiO3, single crystals have been investigated by atomic force and Kelvin force microscopy. In the 90° a-c domains, regular gradients with angles of 3.0° to 3.24° in pure PT, 2.98° to 3.34° in Mn-doped PT at the domain boundary were measured in as-grown crystals. The angles of gradient are varied by the crystal tetragonality (c/a) and obeyed the following equation, θ(deg.)=2tan-1((c/a)-90. The difference of electrical potential in a- and c-domains was 2.4 to 9.3 mV, in which a-domains arranged sideways to the surface and c-domains aligned perpendicular to the surface. In the 180° c-c domain, the trapezoidal forms with a step of 80 to 100 nm were constructed and the difference of electrical potential between the top and bottom of the trapezoidal step was 15 mV due to the each plus and minus surfaces in c-domains
  • Keywords
    atomic force microscopy; electric domains; electric potential; ferroelectric materials; lead compounds; manganese; scanning probe microscopy; Kelvin force microscopy; Mn-doped PbTiO3; PbTiO3; PbTiO3:Mn; as-grown crystals; atomic force microscopy; crystal tetragonality; domains; electrical potential; electrical potentials; ferroelectric; single crystals; surface gradients; trapezoidal forms; trapezoidal step; Area measurement; Atomic force microscopy; Atomic measurements; Crystals; Electric potential; Electric variables measurement; Force measurement; Kelvin; Surface morphology; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
  • Conference_Location
    Montreux
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-4959-8
  • Type

    conf

  • DOI
    10.1109/ISAF.1998.786719
  • Filename
    786719