• DocumentCode
    3078663
  • Title

    Polarization phenomena in SrBi2Ta2O9 ferroelectric thin films at the nanometer scale

  • Author

    Gruverman, A. ; Tokumoto, H.

  • Author_Institution
    Sony Corp. Res. Centre, Yokohama, Japan
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    427
  • Lastpage
    430
  • Abstract
    Scanning force microscopy is applied to investigation of domain arrangement and nanoscale switching properties in SrBi2Ta2O9 (SBT) thin films. Correlation between domain contrast and film texture is discussed. Statistical analysis of polarization reversal and local hysteresis loop measurements were performed. Polarization retention properties of SBT films were studied by direct observation of domain structure temporal behavior
  • Keywords
    atomic force microscopy; bismuth compounds; dielectric hysteresis; dielectric polarisation; electric domains; ferroelectric materials; ferroelectric switching; ferroelectric thin films; nanostructured materials; strontium compounds; texture; SBT thin films; SrBi2Ta2O9; SrBi2Ta2O9 ferroelectric thin films; SrBi2Ta2O9 thin films; domain arrangement; domain contrast; domain structure temporal behavior; film texture; local hysteresis loop; nanometer scale; nanoscale switching properties; polarization phenomena; polarization retention properties; polarization reversal; scanning force microscopy; statistical analysis; Capacitors; Fatigue; Ferroelectric films; Ferroelectric materials; Microscopy; Piezoelectric films; Polarization; Statistical analysis; Transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
  • Conference_Location
    Montreux
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-4959-8
  • Type

    conf

  • DOI
    10.1109/ISAF.1998.786723
  • Filename
    786723
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3078663