Microwave device modelling for HBT CAD in mobile communications applications

Author

Snowden, Christopher M.

Author_Institution

Dept. of Electron. & Electr. Eng., Leeds Univ., UK

fYear

1996

fDate

25-26 Nov 1996

Firstpage

2

Lastpage

7

Abstract

A new electro-thermal physics-based equivalent circuit model for HBTs is described which is suitable for use in CAD of circuits intended for mobile communication applications. The multi-cell electro-thermal equivalent circuit model of an AlGaAs/GaAs HBT is described which is applied to the large-signal microwave characterization of 0.5 Watt power amplifiers for operation at 1.88 GHz. This highly efficient model, which incorporates a new multi-finger electro-thermal model, has been used to perform DC, small-signal and load-pull characterization and investigate parameter-spreads due to fabrication process variations

Keywords

III-V semiconductors; aluminium compounds; circuit CAD; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power amplifiers; mobile communication; semiconductor device models; 0.5 W; 1.88 GHz; AlGaAs-GaAs; HBT; III-V semiconductors; circuit CAD; electro-thermal physics-based equivalent circuit; fabrication process variations; large-signal microwave characterization; load-pull characterization; microwave device modelling; mobile communications applications; parameter spreads; power amplifiers; small-signal characterization; Data mining; Design automation; Equivalent circuits; Fabrication; Heterojunction bipolar transistors; Microwave devices; Mobile communication; Power amplifiers; Power system modeling; Predictive models;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO

Conference_Location

Leeds

Print_ISBN

0-7803-3130-3

Type

conf

DOI

10.1109/EDMO.1996.575788

Filename

575788