Novel ferroelectricity in polar semiconductor ZnO by Li-substitution

Author

Onodera, A. ; Tamaki, N. ; Yoshio, K. ; Satoh, H. ; Takama, T. ; Yamashita, H.

Author_Institution

Dept. of Phys., Hokkaido Univ., Sapporo, Japan

fYear

1998

fDate

1998

Firstpage

475

Lastpage

478

Abstract

Ferroelectricity in Li-substituted II-VI semiconductor ZnO ceramics was studied. A ferroelectric phase transition temperature T_c is 370 K in hot-pressed ceramics synthesized by the spark plasma sintering method, although the previous cold-pressed ceramics showed a relative low T_c (330 K). The Rietveld analysis of X-ray powder diffraction pattern showed R_WP=7.4%, u=0.3821 (3) for Zn (Li) and x=0.09 at 293 K in Zn_1-xLi_xO hot-pressed ceramics. The ferroelectricity in Zn_1-xLi_xO results from small structural distortion (of order 10^-3 Å) induced along the polar c-axis by substitutional Li atoms, instead of the host Zn atoms in the wurtzite structure

Keywords

II-VI semiconductors; crystal structure; ferroelectric Curie temperature; ferroelectric ceramics; ferroelectric semiconductors; hot pressing; lithium compounds; sintering; wide band gap semiconductors; zinc compounds; 470 K; Li-substituted II-VI semiconductor ZnO ceramics; Li-substitution; Rietveld analysis; T_c; X-ray powder diffraction pattern; Zn_1-xLi_xO hot-pressed ceramics; ZnLiO; ZnO; cold-pressed ceramics; ferroelectric phase transition temperature; ferroelectricity; hot-pressed ceramics; polar c-axis; polar semiconductor; spark plasma sintering method; structural distortion; wurtzite structure; Ceramics; Conductivity; Dielectrics; Ferroelectric materials; Physics; Plasma temperature; Powders; Sparks; X-ray diffraction; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on

Conference_Location

Montreux

ISSN

1099-4734

Print_ISBN

0-7803-4959-8

Type

conf

DOI

10.1109/ISAF.1998.786735

Filename

786735