Title :
Growth and characterization of Na1/2Bi1/2TiO 3-K1/2Bi1/2TiO3BaTiO3 single crystal piezoelectrics
Author :
Farrey, G.W. ; Soukhojak, A. ; Sheets, S. ; Chiang, Y.M.
Author_Institution :
Center for Mater. Sci. & Eng., MIT, Cambridge, MA, USA
Abstract :
While lead oxide-based piezoelectrics exhibit some of the highest field-induced strains and most efficient electrical-mechanical energy conversion of known compounds, the toxicity and high vapor pressure during processing of lead oxide ceramics have resulted in an increasing demand for environmentally benign alternative materials with comparable properties. In this work Na1/2Bi1/2TiO3-BaTiO3 solid solutions have been grown in single crystal form by a flux method. Rhombohedral phase crystals, oriented in the pseudocubic ⟨100⟩ directions, exhibit low-hysteresis actuation with up to 0.24% free strain near the morphotropic phase boundary. Tetragonal phase crystals, oriented in the pseudocubic ⟨100⟩ direction, exhibit free strains as high as 0.85% with greater hysteresis. Actuation energy densities exceed those of optimized polycrystalline lead-perovskites such as Pb(ZrxTi1-x)O3 and Pb(Mg1/3Nb2/3)O3. Significant actuation capability is retained at stresses in excess of 100 MPa
Keywords :
barium compounds; bismuth compounds; crystal growth from melt; crystal symmetry; dielectric hysteresis; piezoelectric materials; potassium compounds; sodium compounds; Na0.5Bi0.5TiO3-K0.5Bi 0.5TiO3-BaTiO3; Na1/2Bi1/2TiO3-K1/2Bi 1/2TiO3BaTiO3; actuation energy densities; characterization; efficient electrical-mechanical energy conversion; field-induced strains; flux method; free strains; greater hysteresis; growth; high vapor pressure; low-hysteresis actuation; morphotropic phase boundary; piezoelectrics; rhombohedral phase crystals; tetragonal phase crystals; toxicity; Bismuth; Capacitive sensors; Ceramics; Crystalline materials; Crystals; Energy conversion; Hysteresis; Lead compounds; Piezoelectric materials; Solids;
Conference_Titel :
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location :
Montreux
Print_ISBN :
0-7803-4959-8
DOI :
10.1109/ISAF.1998.786753